Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319B
Key Features and Performance
•
•
•
•
•
•
0.15um pHEMT Technology
21-27 GHz Frequency Range
1.75 dB Nominal Noise Figure
19 dB Nominal Gain
8dBm Pout
3V, 45 mA Self -biased
Point-to-Point Radio
Point-to-Multipoint Communications
5
0
-5
Chip Dimensions 2.235 mm x 1.145 mm
Preliminary Data, 6-10 Fixtured samples @ 25C
two 1-mil ball bonds at RF interconnects
6.0
5.0
4.0
Primary Applications
•
•
e
3.0
2.0
1.0
0.0
15.0
S11
-10
(dB)
-15
-20
-25
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
Frequency (GHz)
NF @ 25C
25
0
-5
S11 @ 25C
20
-10
-15
15
S21
(dB)
10
S22
(dB)
-20
-25
-30
5
-35
-40
0
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
-45
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
Fre que ncy (GHz)
Gain @ 25C
S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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