Advance Product Information
April 5, 2006
TGA2501
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
Parameter 5/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
9V
-5 V to 0 V
2.0 A
52 mA
26 dBm
14.4 W
150
0
C
320
0
C
-65 to 150
0
C
4/
6/
4/
3/ 4/
1/ 2/
Notes
4/
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to
failure (T
M
). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
When operated at this bias condition with a base plate temperature of 70
0
C, the
median life is reduced from 1.6E+6 to 5.4E+4 hours.
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
.
These ratings represent the maximum operable values for this device.
This current can be doubled by applying gate bias to both gate pads.
TABLE II
THERMAL INFORMATION
PARAMETER
R
θjc
Thermal Resistance
(Channel to Backside)
TEST CONDITION
V
D
= 8 V
I
D
= 1.2 A
P
DIS
= 9.6 W
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
144.56
7.77
1.6E+6
T
CH
(qC)
R
T
jc
(qC/W)
MTTF
(HRS)
3/
4/
5/
6/
6
TriQuint Semiconductor Texas Phone : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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