Advance Product Information
February 7, 2006
13 - 15 GHz 4W Power Amplifier
Key Features
•
•
•
•
•
•
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
TGA2502
0.5 um pHEMT Technology
>25 dB Nominal Gain
>36 dBm Nominal Psat
44 dBm Nominal IP3 @ 14 GHz
Bias 7V @ 1.3A Idq, 2.1A under RF drive
Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Idq = 1.3A
30
25
20
Primary Applications
•
Ku-Band VSAT Transmit
Gain (dB)
15
10
5
0
-5
-10
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
,
Idq
Bias Conditions: Vd = 7V,
q
= 1.3A
40
35
13GHz
Pout (dBm)
30
25
20
15
10
0
3
6
9
Pin (dBm)
12
15
18
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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