Advance Product Information
December 17, 2002
13 - 17 GHz 2 Watt, 32dB Power Amplifier
•
•
•
•
•
•
•
TGA2503-EPU
Key Features and Performance
33 dBm Midband Pout
32 dB Nominal Gain
10 dB Typical Return Loss
Built-in Directional Power Detector
with Reference
0.5µm pHEMT, 3MI Technology
Bias Conditions: 7V, 680mA
Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=7V Id=680mA
40
35
30
25
20
15
10
11
12
13
14
15
16
17
18
19
5
Primary Applications
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•
Return Loss (dB)
S21
S11
S22
0
-5
-10
-15
-20
-25
VSAT
Point-to-Point
Gain (dB)
Frequency (GHz)
35
34
33
32
31
30
29
28
27
26
25
11
12
13
14
15
16
17
18
19
Psat
PAE
60
55
50
45
40
35
30
25
20
15
10
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
PAE@Psat (%)
Psat (dBm)
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
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