Advance Product Information
July 14, 2005
X-Band Low Noise Amplifier
Key Features
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•
•
•
•
•
TGA2512
Typical Frequency Range: 5 - 15 GHz
1.4 dB Nominal Noise Figure
27 dB Nominal Gain
Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
0.15 um 3MI pHEMT Technology
Chip Dimensions 2.05 x 1.20 x 0.10 mm
(0.081 x 0.047 x 0.004 in)
Product Description
The TriQuint TGA2512 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 27dB typical from 5-15GHz,
the TGA2512 provides excellent noise
performance with typical midband NF 1.4dB,
while the balanced topology offers good return
loss typically 15dB.
The TGA2512 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part is also assembled in
self-biased mode, using a single +5V supply
connection from either side of the chip, or in
gate biased mode, allowing the user to control
the current for a particular applications.
In self-biased mode the TGA2512 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 13dBm. The small size of
2.46mm
2
allows ease of compaction into Multi-
Chip-Modules (MCMs).
The TGA2512 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Noise Figure (dB)
Primary Applications
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X-Band Radar
EW, ECM
Point-to-Point Radio
Measured Fixtured Data
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
40
30
S-Parameter (dB)
20
10
0
-10
-20
-30
-40
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
GAIN
IRL
ORL
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com