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TGA4505 参数 Datasheet PDF下载

TGA4505图片预览
型号: TGA4505
PDF下载: 下载PDF文件 查看货源
内容描述: 4瓦Ka波段HPA [4 Watt Ka Band HPA]
分类和应用: 射频微波高功率电源
文件页数/大小: 9 页 / 237 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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Advance Product Information
July 22, 2005
TABLE I
MAXIMUM RATINGS
Symbol
V
+
-
TGA4505
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current:
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V TO 0V
4A
62 mA
24 dBm
17.2 W
150 C
320 C
-65 to 150
0
C
0
0
Notes
2/
V
I
+
2/
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
2/
2/, 3/
4/, 5/
1/
2/
3/
4/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
When operated at this bias condition with a base plate temperature of 70 C, the
median life is 1E+6 hours.
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
These ratings apply to each individual FET.
0
5/
TABLE II
DC PROBE TEST
(T
A
= 25
qC,
nominal)
NOTES
1/
1/
1/, 2/
1/, 2/
1/, 2/
SYMBOL
MIN
LIMITS
MAX
UNITS
70.5
79.5
1.5
30
30
mA
mS
V
V
V
I
DSS(Q35)
G
M (Q35)
|V
P(Q1, Q9, Q35)
|
|V
BVGS(Q35)
|
|V
BVGD(Q35)
|
15
33
0.5
11
11
1/ Q35 is a 150 um Test FET
2/ V
P
, V
BVGD
, and V
BVGS
are negative.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com