Advance Product Information
April 28, 2003
TGA4514-EPU
TABLE II
DC PROBE TESTS
(Ta = 25
0
C, Nominal)
SYMBOL
I
DSS,Q1
G
M,Q1
V
BVGS,Q1-Q6
V
BVGD,Q1-Q6
V
P,Q1-Q6
PARAMETER
Saturated Drain Current
Transconductance
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Pinch-off Voltage
MIN.
TYP.
114
150
-16
-16
-1
MAX.
UNITS
mA
mS
V
V
V
Q1- Q4 are 400 um FETs, Q5 is 3200 um FET, Q6 is 4000 um FET
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PAR AM E TE R
Frequenc y R ange
D rain Voltage, Vd
D rain C urrent, Id
G ate V oltage, V g
Sm all S ignal G ain, S 21
Input R eturn Loss, S11
O utput R eturn Loss, S22
O utput Pow er @ 1 dB C om pression G ain, P1dB
Saturated Pow er @ P in = 20 dBm , Psat
IM D 3, Freq = 33 G H z, P out/T one = 22 dBm
TYPIC AL
31 - 35
6
1150
-0.5
19
-7
-10
31.5
32.5
31
UNITS
GHz
V
mA
V
dB
dB
dB
dBm
dBm
dBc
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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