Advance Product Information
December 2, 2004
Ka-Band 2W Power Amplifier
Key Features
•
•
•
•
•
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TGA4516
30 - 40 GHz Bandwidth
> 33 dBm Nominal Psat @ Pin = 20dBm
18 dB Nominal Gain
Bias: 6 V, 1050 mA Idq
(1.9A under RF Drive)
0.15 um 3MI MMW pHEMT Technology
Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Military Radar Systems
Ka-Band Sat-Com
Point to Point Radio
Primary Applications
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Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka-band applications. The part
is designed using TriQuint’s 0.15um power
pHEMT process. The small chip size is
achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that
allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated
output power, and has typical gain of 18 dB at
a bias of 6V and 1050mA (Idq). The current
rises to 1.9A under RF drive.
This HPA is ideally suited for many
applications such as Military Radar Systems,
Ka-band Sat-Com, and Point-to-Point
Radios.
The TGA4516 is 100% DC and RF tested
on-wafer to ensure performance compliance.
Preliminary Fixtured Data
V
D
= 6V, I
D
= 1050mA
25
20
15
10
S-Parameters (dB)
5
0
-5
-10
-15
-20
-25
-30
-35
30
32
34
36
38
40
Frequency (GHz)
S22
S11
S21
Pout @ Pin =20dBm
35
34
Pout (dBm)
33
32
31
30
30
32
34
36
38
40
Frequency (GHz)
Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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