Advance Product Information
June 4, 2004
TGA4517-EPU
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current (Quiescent), Idq
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Output Power, Psat
TYPICAL
31 - 37
6
2
-0.5
15
14
12
35
UNITS
GHz
V
A
V
dB
dB
dB
dBm
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST
CONDITIONS
Vd = 6 V
Idq = 2 A
Pdiss = 12 W
T
CH
O
( C)
R
T
JC
(qC/W)
T
M
(HRS)
R
θJC
Thermal Resistance
(channel to backside of carrier)
122.3
4.36
1.2E+7
Note:
Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature and with RF applied.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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