Product Data Sheet
March 5, 2007
K Band High Linearity Power Amplifier
Key Features
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TGA4530
Frequency Range: 17 - 21 GHz
20 dB Gain
30 dBm nominal P1dB
42dBm nominal OTOI
20 dB Return Loss
Bias 5 - 7 V @ 825 mA
0.25 um 3MI pHEMT technology
Chip Dimensions 2.43 x 1.45 x .1mm
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 825mA
25
20
Gain
15
IRL
10
ORL
5
0
-5
-10
-15
-20
-25
-30
-35
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
44
42
40
OTOI @ 20dBm/Tone
38
P1dB
36
34
32
30
28
26
24
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
Primary Applications
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Point-to-Point Radio
K Band Sat-Com
Sparameters (dB)
Product Description
The TriQuint TGA4530 is a High Power Amplifier
MMIC for 17 – 21GHz applications. The part is
designed using TriQuint’s 0.25um 3MI pHEMT
production process.
The TGA4530 nominally provides 30dBm output
power @ 1dB gain compression and 42dBm OTOI
at a bias of 7V and 825mA. The typical gain is 20dB.
The part is ideally suited for low cost emerging
markets such as Point-to-Point Radio, and K-band
Satellite Communications.
The TGA4530 is 100% DC and RF tested on-wafer to
ensure performance compliance.
The TGA4530 has a protective surface passivation
layer providing environmental robustness.
Lead-Free & RoHS compliant
P1dB & OTOI (dBm)
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
