TGA4542
37 - 40 GHz 1W Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain to Gate Voltage, Vd - Vg
Drain Voltage, Vd
Gate Voltage, Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,
T=25°C
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Min
Typ
+25
6.0
900
1500
-0.7
Rating
10V
+6.5 V
-4 to 0 V
2086 mA
-8.2 to 113 mA
13.6 W
26 dBm
200°C
320°C
-40 to 150C
Max Units
+85
C
V
mA
mA
V
Operating Temp. Range -40
Vd
Id
Id (Under RF Drive)
Vg
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical.
Parameter
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power
Output Power
Output TOI
Gain Temperature Coefficient
Power Temperature Coefficient
Conditions
Min
37
Typ
26
8
Max
40
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB/°C
dB/°C
Saturation
1dB Gain Compression
18 dBm Output/Tone
1dB Gain Compression
15
32.5
31.5
38
-0.04
-0.013
Preliminary Data Sheet: Rev - 9/15/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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