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TGA4817-EPU 参数 Datasheet PDF下载

TGA4817-EPU图片预览
型号: TGA4817-EPU
PDF下载: 下载PDF文件 查看货源
内容描述: 10Gb / s的宽动态范围差分TIA [10Gb/s Wide Dynamic Range Differential TIA]
分类和应用:
文件页数/大小: 9 页 / 412 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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Advance Product Information
September 27, 2004
TGA4817-EPU
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°C
for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com