TGA8810-SCC
DC CHARACTERISTICS
I
D
= I
D1
+ I
D2
PARAMETER
TEST CONDITIONS
TYP
UNIT
Total positive supply current
T
A
= 25°C
V = V
D2
= 5 V
D1
90
mA
EQUIVALENT SCHEMATIC
Bond Pad #2
V
D1
Bond Pad #3
V
D2
RF Output
FET 2
500 m
RF Input
FET 1
500 m
0.1 pF
C
1
C
2
0.2 pF
5
5
9
9
6
R
S12
R
S13
R
S11
6
R
S21
R
S23
R
S22
R
S11
, R
S12
, R
S13
, R
S21
, R
S22
, and R
S23
provide the flexibility of selecting bias cur rent and RF per formance. C
1
and
C
2
can be used in tuning for impr oved input match. For best r esults, use the assembly configuration shown in
the “Recommended Assembly Diagram” on page 6.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
5
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
