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TGA9083-EEU
Power Amplifier
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PHOTO ENLARGEMENT
6.5 to 11.5- GHz Frequency Range
9083
5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
19-dB Typical Small Signal Gain
40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss
On-Chip Active Gate Bias Circuit Option Simplifies Biasing
4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to
DESCRIPTION
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 1 9-dB. In balanced configuration, 12 Watts of output power is
achievable with 40 % PAE.
The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz mak e it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire -bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
