Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
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TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz
> 36 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
4mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 300-500mA
(U
nder RF Drive, Id rises from 300mA to 960mA)
Chip Dimensions: 0.57 x 1.30 x 0.10 mm
(0.022 x 0.051 x 0.004 in)
Product Description
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.
The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-04 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Primary Applications
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35
30
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Maximum Gain (dB)
25
20
15
10
5
0
0
2
4
MSG
MAG
6
8
10
12
14
16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
