Advance Product Information
September19, 2005
DC - 20 GHz Discrete power pHEMT
•
•
•
•
•
•
•
•
TGF2022-12
Key Features and Performance
Frequency Range: DC - 20 GHz
> 31 dBm Nominal Psat
58% Maximum PAE
39 dBm Nominal OIP3
13 dB Nominal Power Gain
Suitable for high reliability applications
1.2mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 90-150mA
(U
nder RF Drive, Id rises from 90mA to 300mA)
Chip Dimensions: 0.57 x 0.79 x 0.10 mm
(0.022 x 0.031 x 0.004 in)
Product Description
The TriQuint TGF2022-12 is a discrete
1.2 mm pHEMT which operates from
DC-20 GHz. The TGF2022-12 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-12 typically provides
> 31 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-12 appropriate for
high efficiency applications.
The TGF2022-12 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-12 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
•
Primary Applications
•
•
•
•
•
35
30
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Maximum Gain (dB)
25
MSG
20
15
10
5
0
0
2
4
6
8
10
12
14
16
MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
