TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
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Frequency Range: DC - 18 GHz
> 38 dBm Nominal Psat
55% Maximum PAE
15 dB Nominal Power Gain
Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V
Typical
Technology: 0.25 um Power GaN on SiC
Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical
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Primary Applications
Space
Military
Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-01 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-01 typically provides > 38 dBm of
saturated output power with power gain of 15 dB.
The maximum power added efficiency is 55%
which makes the TGF2023-01 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
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Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Dec 2008 © Rev A
1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
