TGF2023-05
25 Watt Discrete Power GaN on SiC HEMT
Key Features
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Frequency Range: DC - 18 GHz
> 44 dBm Nominal Psat
55% Maximum PAE
15 dB Nominal Power Gain
Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V
Typical
Technology: 0.25 um Power GaN on SiC
Chip Dimensions: 0.82 x 1.44 x 0.10 mm
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Primary Applications
Space
Military
Broadband Wireless
Measured Performance
Bias conditions: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical
Product Description
The TriQuint TGF2023-05 is a discrete 5.0 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-05 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-05 typically provides > 44 dBm of
saturated output power with power gain of 15 dB.
The maximum power added efficiency is 55%
which makes the TGF2023-05 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
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Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Dec 2008 © Rev A
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
