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TGF2960-SD 参数 Datasheet PDF下载

TGF2960-SD图片预览
型号: TGF2960-SD
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5瓦特的DC- 5GHz的包装HFET [0.5 Watt DC-5 GHz Packaged HFET]
分类和应用:
文件页数/大小: 21 页 / 1058 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TGF2960-SD
0.5 Watt DC-5 GHz Packaged HFET
Key Features
Frequency Range: DC-5 GHz
Nominal 900 MHz Application Board Performance:
TOI: 40 dBm
28 dBm Psat, 27 dBm P1dB
Gain: 19 dB
Input Return Loss: -10 dB
Output Return Loss: -5 dB
Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
(Typical)
Package Dimensions: 4.5 x 4 x 1.5 mm
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
Primary Applications
Cellular Base Stations
WiMAX
Wireless Infrastructure
IF & LO Buffer Applications
RFID
Product Description
The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 100 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 19 dB of gain, 28 dBm of
saturated output power, and 40 dBm of output IP3.
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2012 © Rev B
1