Product Data Sheet
December 16, 2002
DC - 10.5 GHz Discrete HFET
TGF4250-SCC
Key Features and Performance
•
•
•
•
•
•
•
•
•
•
Nominal Pout of 34 dBm at 8.5 GHz
Nominal Gain of 8.5 dB at 8.5 GHz
Nominal PAE of 53% at 8.5 GHz
Suitable for high reliability applications
4800 µm x 0.5 µm FET
Chip dimensions: 0.61 x 1.37 x 0.1 mm
(0.024 x 0.054 x 0.004 in)
Bias at 8 Volts, 384 mA
Cellular Base Stations
High-reliability space
Military
Primary Applications
Description
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34
dBm power output, 13 dB gain, and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes. The TGF4250-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
