Advance Product Information
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
•
•
•
•
•
0.25um pHEMT Technology
DC 22 GHz Frequency Range
1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
Floating Source Configuration
Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
•
17
15
13
Output Power-dBm, Gain-d
11
9
7
5
Pout (dBm)
3
1
-12
-8
-4
0
Input Power - dBm
4
8
12
Gain (dB)
PAE (%)
0
10
F = 10 GHz
Vd = 3 V
Iq = 15 mA
Low Noise amplifiers
80
70
60
50
40
30
20
Power Added Efficiency-
2.4
2.2
2.0
1.8
Noise Figure - dB
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
10
15
20
25
30
35
40
45
50
Drain Current - mA
16
15
14
13
12
11
10
9
8
7
6
F = 10 GHz
Associated Gain - dB
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
NF (dB) Vd = 8 V
Gain (dB) Vd = 3 V
Gain (dB) Vd = 5 V
Gain (dB) Vd = 8 V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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