Advance Product Information
WIRELESS COMMUNICATIONS DIVISION
Preliminary:
Subject to change without notice
3V HBT TDMA Power Amplifier IC
Selected Electrical Characteristics
Test Conditions:
V
CC
= +3.5 V, T
C
= 25°C, V
bias
=2.75V
Parameter
Usable Frequency Range
TDMA Output Power
TDMA Power Added Efficiency
ACP, Pout = +29.5 dBm
ALT, Pout = +29.5dBm
Large Signal Gain
Small Signal Gain
Receive Band Noise
Quiescent Current,
uses V
mode
Switching
V
mode
, Externally
Switched.
AMPS Mode
TDMA Mode
AMPS Mode
TDMA Mode
0
2.4
Min.
824
29.5
47
-30
-52
27
26.5
-92
55
70
0
2.7
-30
-40
29.5
47
0.3
3.0
Typ.
Max.
849
Units
MHz
dBm
%
dBc
dBc
dB
dB
dBm/30KHz
mA
mA
V
V
dB
dB
dBm
%
TQ7125
Primary Application(s)
•
•
•
•
IS-136 Mobile Phones
AMPS Mobile phones
Dual Mode Mobile phones
CDPD Modems
Key Features
•
•
•
•
•
•
High Efficiency
Low Quiescent Current,
Mode Selectable
Small size: 3x3 mm leadless package
Few external components
Excellent ACP Performance
Single +2.7V Supply
Second Harmonic, P
OUT
=+29.5 dBm
Third Harmonic, P
OUT
=+29.5 dBm
AMPS Output Power
AMPS Power Added Efficiency
Application Circuit, US Cellular Band
V
CC 2
Package: 3x3 mm
Leadless 16 pin
3.0 mm
V
CC 1
V
CC1
GND GND GND
GND
16
15
14
13
RF
OUT
RF Input
50 OhmLine
RF
IN
TQ7125
GND
RF
OUT
50 Ohm
RF Output
1
12
RF
OUT
RF
OUT
V
mode
Bypass
V
REG
V
REG
V
bias
V
bias
GND
2
GND
3
11
3.0 mm
10
Open
V
mode
4
9
5
6
7
8
TQS Wireless Communications
2300 NE Brookwood Parkway
Hillsboro, OR 97124
(503) 615-9000
FAX:(503) 615-8900
05/14/01
REV. 4
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
