Limited Release- Proprietary
Combined 0.7μm E/D pHEMT & 2μm HBT Foundry Service
TQBiHEMT
Features
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E-Mode, 0.30 V, Vth
•
D-Mode, -0.8 V Vp
•
InGaAs Active Layer pHEMT
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TQBiHEMT Process Cross-Section
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General Description
TriQuint’s TQBiHEMT process is based on our production-
released 0.7 µm TQPED and TQHBT3.1 processes. TQPED
includes E-Mode and D-Mode pHEMT transistors. TQHBT3.1 is
a 2 µm emitter InGaP HBT process designed for high rugged-
ness, high power applications. TQBiHEMT combines both proc-
esses onto a single wafer, enabling designers to integrate highly
efficient, high power InGaP HBT PAs onto a single die with
switches, LNAs, mixers and other functions that exhibit higher
performance with a pHEMT realization. This process is targeted
for integration of power amplifiers with linear, low loss and high
isolation RF switch applications, converters and integrated RF
Front Ends. The three metal interconnecting layers are encapsu-
lated in a high performance dielectric that allows wiring flexibil-
ity, optimized die size and plastic packaging simplicity. Precision
NiCr resistors and high value MIM capacitors are included allow-
ing higher levels of integration, while maintaining smaller, cost –
effective die sizes.
Process + InGaP HBT
0.7 µm Optical Lithography-
Gates
2 µm Optical Lithography- Emit-
ters; Beta = 75
High Density Interconnects:
•
2 Global
•
1 Local
High-Q Passives
Thin Film Resistors
High Value Capacitors (1200
pF/µm
2
)
Backside Vias Optional
Based on Production TQPED
pHEMT and TQHBT3.1 HBT
Applications
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Integration of Highly Efficient
•
•
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and Linear Power Amplifiers
Low Loss, High Isolation, Low-
Harmonic Content Switches
Integrated digital control logic
for Switches and Transceivers
Converters
Integrated RF Front Ends– LNA,
SW, PA
Wireless Transceivers, Base sta-
tions, Direct Broadcast Satellite
Radars, Digital Radios, RF /
Mixed Signal ICs
Power Detectors and Couplers
Page 1 of 3; Rev 0.3; 6/05/2008
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
