Production Process
InGaP HBT Foundry Service
Features
Metal 2 - 4um
TQHBT
•
•
•
•
•
Dielectric
Metal 1 - 2um
Dielectric
E
B
C
Emitter
Metal 1 - 2um
B
C
NiCr
MIM
Metal 0
Base
Collector
•
Sub Collector
Isolation Implant
Buffer & Substrate
•
•
•
•
•
•
•
TQHBT Process Cross-Section
General Description
TriQuint’s TQHBT process is a highly reliable InGaP HBT
process with three levels of interconnecting metal. Thick
metal interconnects and high quality passives promote inte-
gration. The thick metal interconnects, which promote en-
hanced thermal management, and high density capacitors
keep die sizes small. MOCVD epitaxial processes are utilized
to grow the active layers. A carbon-doped Base and InGaP
Emitter are utilized for high RF performance consistent with
high reliability. Precision NiCr resistors and high value MIM
capacitors are included. The three metal layers are encapsu-
lated in a high performance dielectric that allows wiring flexi-
bility and plastic packaging simplicity.
InGaP Emitter Process for High
Reliability and Thermal Stability
Base Etch Stop for Uniformity
MOCVD Epitaxy
High Linearity in PA applications
High Density Interconnects;
•
2 Global, 1 Local
•
Over 6 µm Total Thickness
•
Dielectric Encapsulated Metals
Thick Metal Interconnects:
•
Enhanced Thermal Management
•
Minimum Die Size
Effective Base Ballasting for
Maximum Gain
150 mm Wafers
High-Q Passives
NiCr Thin Film Resistors
High Value Capacitors
Backside Vias Optional
Validated Models and Design
Support
Applications
•
•
•
•
•
•
Power Amplifiers
Driver Amplifiers
Wideband, General Purpose
Amplifiers
Gilbert Cell Mixers
VCOs
Single Supply and Easy Biasing
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Semiconductors for Communications
www.triquint.com
Page 1 of 5; Rev 2.1 8/10/02
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
