Production Process
Power MESFET Foundry Service
TQHiP
Air Bridge - 4um
Features
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Metal 1
Metal 1 – 2 um
MIM Metal
NiCr
Metal 0
N+
N+
Isolation Implant
N-/P- Channel
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D MESFET
MIM Capacitor
Semi-Insulating GaAs Substrate
NiCr Resistor
Power MESFET Process
Interconnects:
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2 Global (one airbridge)
•
1 Local
High-Q Passives
Bulk & Thin Film Resistors
Backside Vias Optional
High Volume Production
Processes
Validated Models and
Design Support
TQHiP Process Cross-Section
Applications
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General Description
TriQuint’s TQHiP process is our robust, high power density
MESFET process. It provides a straight-forward, low cost
process for a variety of circuits and applications. Its high oper-
ating and breakdown voltages make it ideal for wireless or
wired infrastructure applications. A thick (4 µm) gold airbridge
complements the 2 µm thick gold global metal and 0.5 µm
thick gold surface layer for wiring flexibility and interconnect
density. Precision NiCr resistors and high value MIM capaci-
tors are included.
Power Amplifiers
Switches
Frequencies thru X-Band
Base Station Driver
Amplifiers
CATV Line Amplifiers
Cellular Power Amps, Driv-
ers, Switches
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Semiconductors for Communications
www.triquint.com
Page 1 of 4; Rev 2.1 4/30/02
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
