TQM713024
Data Sheet
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module
Functional Block Diagram
Vcc1
Vcc2
Features
•
•
•
RF Out
InGaP HBT Technology
High Efficiency: 38% @ 28dBm
Capable of running as 0-bit PA in low bias
mode to 28dBm
Supports new chipsets with Vref@2.6V
Optimized for 50 ohm System
Small 8-pin, 3x3mm module
Excellent Rx band noise performance
Lead-free 260°C RoHS Compliant
Full ESD Protection
RF In
Input
Match
Output
Match
•
Vmode
1st
Stage
PA
2nd
Stage
GND
•
•
•
•
•
Vref
1 bit Bias Control
GND
Product Description
The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for
use in mobile phones. Its compact 3x3mm package makes it ideal for today’s
extremely small data enabled phones. Its RF performance meets the
requirements for IS-95/98/CDMA2000 & WCDMA Rel99 standards.
The TQM713024 is designed on TriQuint’s advanced InGaP HBT GaAs
technology offering state of the art reliability, temperature stability and
ruggedness. Selectable bias mode and a shutdown mode with low leakage
current, improve talk and standby time. The output match, realized within the
module package, optimizes efficiency/linearity at maximum rated output power.
The TQM713024 has robust performance into mismatch and excellent linearity
margin under all operating conditions including the ability to operate in LP Mode all
the way to full output power.
Applications
•
•
IS-95/CDMA2000
Single/Dual/Tri Mode CDMA/AMPS phones
Package Style
1
8
7
6
5
Electrical Specifications
Parameter
Frequency
CDMA mode maximum Pout
1
CDMA ACPR1 (@ 885kHz Offset)
CDMA ACPR2 (@ 1.98MHz Offset)
PAE @ 28dBm
I
LK
Rx Band Noise
34
Min
824
28
-50
-60
38
5
-137
-46
-56
Typ
Max
849
Units
MHz
dBm
dBc
dBc
%
µA
dBm/Hz
Note 1:
Test Conditions CDMA Mode: V
CC1
=3.4VDC, V
CC2
=3.4VDC, V
REF
=2.85VDC, Tc=25°C
2
3
4
8-Pin 3.0x3.0mm Plastic Module Package
Top View (X-ray)
For additional information and latest specifications, see our website:
www.triquint.com
Revision F, August 10, 2006
Data Sheet
1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
