3. GSM850 Electrical Characteristics
Conditions unless otherwise stated: T
A
=25°C, Z
S
=Z
L
=50Ω; V
BATT
=3.5V; BS=low; TX_EN=high; P
IN
=5dBm,
Duty Cycle = 25%, Pulse Width = 1154µs, V
RAMP
= V
RAMP_MAX
Item
#
1
2
3
Parameter
Frequency range
Input power
Input impedance
Input VSWR
4
5
Load impedance
Load mismatch stability
All angles
All spurious < -36 dBm,
RBW=3MHz
6
Load mismatch ruggedness
All angles
No damage or permanent
degradation
7
8
Forward isolation
Crossover isolation
2nd harmonic
9
Harmonics
2nd harmonic
3rd harmonic
4th ... 8th harmonic
10
Maximum output power
824 MHz
≤
f
≤
849 MHz
P
OUT
MAX
Specifications
Symbol
f
MIN
...f
MA
P
IN
Min
824
2
5
50
1.5:1
50
2.5:1
Ω
Set V
RAMP
where P
OUT
≤
34.2dBm into
VSWR
8:1
50 Ohm load
Typ
Max
849
8
Unit
MHz
dBm
Ω
TX_EN = low or high
0.2V
≤
V
RAMP
≤
V
RAMP
MAX
remarks
Set V
RAMP
where P
OUT
≤
34.2dBm into
VSWR
10:1
50 Ohm load
-40
-30
dBm TX_EN = low, P
IN
= 8dBm
Measured @ high band port
dBm P
OUT
≤
P
OUT
dBm
dBm P
OUT
≤
34.2dBm
dBm
-25
-20
MAX
@ low band port
-20
-20
-10
-15
-5
34.2
32.5
35
dBm Nominal conditions
dBm V
BATT
= 3.0V, T
A
= 85°C
0
dBm TX_EN=High, V
RAMP
=0.2V, PIN=8dBm
%
2.3
A
P
OUT
= P
OUT
MAX
MAX
11
12
13
14
Minimum output power
Power added efficiency
Power supply current
Output noise power, BW=100kHz
869 MHz... 894 MHz
P
OUT
MIN
PAE
I
BAT
45
1.3
53
1.8
DC current at P
OUT
= P
OUT
P
OUT
= P
OUT
MAX
-85
-82
250
dBm f
0
= 849 MHz
dB/V P
OUT
>0dBm
15
Slope P
OUT
/V
RAMP
Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13)
All specifications subject to change without notice
4