TQM7M5013
Data Sheet
Quad-Band GSM850/GSM900/DCS/PCS Advanced Input Power Controlled EDGE PAM
Functional Block Diagram
RF_in_DCS
Vbatt
HBEn
Vmode0
Vmode1
LBEn
GND
RF_in_GSM
RF_out_GSM
C
ONTROL
C
IRCUIT
Vcc
RF_out_DCS
Features
For Quad Band GSM/EDGE
Digital Control Interface
Low Current at Backed-off Power Levels
Input power controlled – GMSK and 8PSK
LB has 4 modes – HP, MP, LP, and ULP
HB has 3 modes – HP, LP, and ULP
HBT/PHEMT High Efficient Technology
High–Power Linearity
Standard LB and HB paths
50Ω input and Output Impedance
Halogen-free
11 Pin Package
Product Description
The TQM7M5013 is an input power controlled, multiple gain state, quad band,
GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE
solutions. This highly efficient PAM significantly improves talk-time while still
providing an easy to use solution in a small form factor. The PA output power is
controlled by the input power coming from the transceiver in both GMSK and 8PSK
modes and so does not require a Vramp input. Additionally, the small 5mm x 5mm
package requires minimum board space and allows for high levels of phone
integration.
Applications
GSM/EDGE/WEDGE Handsets
GSM/EDGE/WEDGE Wireless Cards
Electrical Specifications
1
Parameter
Package Style
DCS
Typ
GSM850
Typ
GSM900
Typ
PCS
Typ
Units
GMSK HPM Pout
GMSK MPM Pout
8PSK (RMS Power)
GMSK LPM Pout
GMSK ULPM Pout
GMSK HPM PAE
GMSK MPM PAE
GMSK LPM PAE
GMSK ULPM PAE
35.3
31.8
29
22
20.5
52
43
27
29
35
32.2
29
22
21
55
45
31
32
33.3
-
28
22.8
21.5
55
-
25
23
33
-
28
22
20
52
-
19
16
dBm
dBm
dBm
dBm
dBm
%
%
%
%
Note 1: RF performance measured at standard operating conditions.
Data Sheet
1
For additional information and the latest specifications, see our website:
www.triquint.com
Revision P, August 31, 2011
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
