TQM7M6001
Advance Data Sheet
3V IMT2100 WCDMA Power Amplifier Module
Functional Block Diagram
VCC1
RFIN
GND
VMODE
VREF
Bias Control
Match
Features
VCC2
GND
RFOUT
GND
GND
•
•
•
•
•
•
•
•
•
•
Very compact size – 4 x 4 x 1.1mm³
For 3G UMTS designs in IMT2100 band
High/low output power modes
High efficiency – high mode 40% typical
Supports low collector voltage operation
Low Vref of 2.85V nominal
10 pin package
Positive supply voltage – 3.2 to 4.2 V
50
Ω
input and output impedances
High-reliability InGaP technology
Product Description
Advanced compact 3V linear power amplifier module designed for mobile UMTS
handset applications in IMT2100 band. The small size and high performance is
achieved with high-reliability InGaP HBT technology. The module is fully
integrated, providing a simple 50 Ohms interface on input and output ports. No
external matching or bias components are required. Despite its very compact size,
the module has exceptional efficiency and linearity. The module provides high/low
output power modes and supports low power mode operation at reduced supply
voltage.
Applications
•
For 3G WCDMA designs in IMT2100 band
Electrical Specifications
IMT2100 band
Parameter
Frequency
Pout high mode
PAE high mode
Pout low mode
PAE low mode
ACPR 5MHz
1,2
1,2
2
1
1
Package Style
Max.
1980
Unit
MHz
dBm
40
%
dBm
20
-40
-50
%
dBc
dBc
Min.
1920
27.5
Typ.
4mm x 4mm LGA package (dimensions in mm):
2
16
ACPR 10MHz
Note 1: Test Conditions CDMA High Mode: V
CC1
=3.4VDC, V
CC2
=3.4VDC, V
REF
=2.85VDC,
V
MODE
=low, Tc=25°C, Z
S
=Z
L
=50 Ohm, Pout = 27.5dBm
Note 2: Test Conditions CDMA Low Mode: V
CC1
=3.4VDC, V
CC2
=1.2VDC, V
REF
=2.85VDC,
V
MODE
=high, Tc=25°C, Z
S
=Z
L
=50 Ohm, Pout = 16dBm
For additional information and latest specifications, see our website:
www.triquint.com
Revision B, January 20, 2005
Advance Data Sheet: Subject to change without notice
1
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