TQP4M4003
(Preliminary data sheet Rev0.2)
SPDT High Power 2.5V GSM Antenna Switch
Features:
•
•
•
•
•
SLIM-7 Packaged PHEMT GaAs MMIC Die
Smallest Available GSM SPDT Switch
1.3 x 2.0 mm Footprint
Thin Package: 0.4mm for LTCC Modules
Excellent Harmonic Performance
–74dBc 2
nd
Harmonic at GSM 850/900, +35dBm
–81dBc 2
nd
Harmonic at DCS/PCS, +33 dBm
–77dBc 3
rd
Harmonic at GSM 850/900, +35dBm
–78dBc 3
rd
Harmonic at DCS/PCS, +33 dBm
Highly Linear Control Voltage, to +2.0V
High Isolation: -27dB typ 0.5 to 2 GHz
Low Insertion Loss: 0.39 dB typ at GSM850/900
0.51 dB typ at DCS/PCS
Very Low Control Current
GSM Handset Antenna Switch Modules (ASM)
and Front End Modules (FEM)
SLIM-7 Package Outline:
Top
View
Pin 1
1.3
+0.1 / - 0.05
1.3
xxxx
2.0
+0.1 / - 0.05
2.0
•
•
•
•
•
All dimensions in mm
ANT
3
4
0.4 Max
NC
Application:
Bottom
VC1
View
2
5
VC2
RF1
1
6
RF2
Description:
TriQuint’s TQP4M4003 is a high power antenna switch in a single pole double throw (SPDT) configuration. The die
utilizes TriQuint’s PHEMT MMIC switch process to provide optimized performance for use in GSM applications. The
SLIM-7 package is 0.4mm thick with a 1.3 x 2.0 mm footprint, which is ideally suited to replace package PIN diodes
on height critical LTCC modules. PHEMT Switches are a very low DC current replacement for classic PIN diode
based switches.
Electrical Performance: Ta = 25°C, Zo=50 Ohms, Vcontrol = 0V / 2.5V
1
Parameter
Insertion Loss
Insertion Loss
Isolation RF1 to RF2
2 Harmonic
2 Harmonic
3 Harmonic
3 Harmonic
Return Loss
Leakage Current
Trise, TFall
Ton , Toff
rd
rd
nd
nd
Test Conditions
GSM850/900
DCS/PCS
One port on.
GSM850/900, Pin = +35 dBm
DCS/PCS, Pin = +33 dBm
GSM850/900, Pin = +35 dBm
DCS/PCS, Pin = +33 dBm
0.5 to 2.0GHz
-
10% to 90% RF , 90% to 10% RF
50% control to 90% RF, and 50% control to 10% RF
Units
dB
dB
dB
dBc
dBc
dBc
dBc
dB
µA
µS
µS
Min
Typ
0.40
0.50
-27
-74
-81
-77
-78
-20
Max
100
1
1
Truth Table:
2, 3
VC1
0
1
VC2
1
0
ANT-RF1
Off
On
ANT-RF2
On
Off
Notes:
1.
2.
3.
External DC blocking capacitors are required at all RF ports
State 1 = +2.0V to +5.0V, State 0 = 0V to +0.2V
Differential voltage from State 1 to State 2 must be a minimum of 2.0V
Exceeding any parameter either individually or in combination may
cause permanent damage.
4.
Copyright © 2004TriQuint (pdc rev 0.2. 01/07/04
All specifications subject to change without notice
1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
