TQP777002
Data Sheet
2.4GHz ISM Band InGaP HBT Matched Power Amplifier
Functional Block Diagram
Vc1
16
N/C
1
Bias controller
N/C
15
Vc2
14
Vc3
13
12 N/C
Features
•
•
11 RF Out
High Linearity, 2.4 GHz ISM Band PA for
802.11b/g WLAN Systems
Integrated Output Power Detector
Leadless 3.0 x 3.0 mm SMT Pb-Free
Package
Temperature Compensated Bias Network
with Bias Shutdown Mode
EVM < 3.0% @ +18.5 dBm Linear Output
Power 802.11g modulation
+22 dBm Linear Output Power 802.11b
modulation
Integrated input and output match
Integrated bias chokes
Single 3.3V supply
RF In
2
•
•
•
•
•
•
•
N/C
3
10 N/C
Vref
4
5
N/C
6
N/C
7
N/C
8
Vdet_out
9 N/C
Product Description
The TQP777002 is a high performance, high linearity, medium-power
amplifier designed for 802.11b/g WLAN and other applications in the 2.4GHz
ISM band. The device exhibits industry-leading power added efficiency
under 802.11b and 802.11g modulated signals. The RF input match and
output matches are integrated on chip as are the second and third stage
bias chokes. The power amplifier is manufactured using TriQuint’s InGaP
HBT process and is packaged in an industry standard 3mm x 3mm VQFN-16
Pb-Free package.
Electrical Specifications
Parameter
Frequency Range
Power Gain
Error Vector Magnitude (Pout =
+18.5dBm, 54Mbps OFDM Signal)
Linear Output Power (guaranteed
ACP under 802.11b modulation)
802.11b ACP; +22.0 dBm Output;
1
st
Side Lobe, 11 Mbps
802.11b ACP; +22.0 dBm Output;
2
nd
Side Lobe, 11Mbps
Test Conditions: Ta=25°C; Vc1=Vc2=Vc3=3.3V Vref=2.90V
Min
2400
28.5
typ
-
30.0
<3.0
max
2500
units
MHz
dB
%
dBm
dBc
dBc
21
22
-37
-55
For additional information and latest specifications, see our website:
www.triquint.com
Revision A, July 22, 2004
Data Sheet: Subject to change without notice
2
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
