Pre-Production Process
0.5 um E/D pHEMT Foundry Service
Features
Metal 2
Dielectric
Metal 2 - 4um
TQPED
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Dielectric
Metal 1 - 2um
Metal 1
Metal 1
Dielectric
MIM Metal
NiCr
Nitride
N+
Pseudomorphic
Channel
Metal 0
Isolation Implant
Isolation Implant
MIM Capacitor
NiCr Resistor
E-Mode / D-Mode
pHEMT
Semi-Insulating GaAs Substrate
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•
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0.5 um pHEMT Device Cross-Section
E-Mode, 0.35 V, Vth
D-Mode, -0.8 V Vp
InGaAs Active Layer pHEMT
Process
0.5 um Optical Lithography
Gates
High Density Interconnects:
•
2 Global
•
1 Local
High-Q Passives
Thin Film Resistors
High Value Capacitors
Backside Vias Optional
Based on Production TQPHT
pHEMT and Interconnect
Nominal TOM3 FET Models
Available
General Description
TriQuint’s TQPED process is based on our production-released
0.5 µm TQPHT process. TQPED partners an E-Mode pHEMT
device with our TQPHT D-Mode transistors to be the first
foundry pHEMT process to integrate E-Mode and D-Mode tran-
sistors on the same wafer. This process is targeted for low noise
amplifiers, linear, low loss and high isolation RF switch applica-
tions, converters and integrated RF Front Ends. The TQPED
process offers a D-Mode pHEMT with a –0.8 V pinch off, and an
E-Mode pHEMT with a +0.35 V threshold voltage. The three
metal interconnecting layers are encapsulated in a high perform-
ance dielectric that allows wiring flexibility, optimized die size
and plastic packaging simplicity. Precision NiCr resistors and
high value MIM capacitors are included allowing higher levels of
integration, while maintaining smaller, cost –effective die sizes.
Applications
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•
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Highly Efficient, and Linear
Power Amplifiers
Low Loss, High Isolation, Low-
Harmonic Contnt Switches
Integrated digital control logic
for Switches and Transceivers
Converters
Integrated RF Front Ends– LNA,
SW, PA
Wireless Transceivers, Base sta-
tions, Direct Broadcast Satellite
Radars, Digital Radios, RF /
Mixed Signal ICs
Power Detectors and Couplers
Production Release: Q1’2005
Page 1 of 3; Rev 1.0 12/1/2004
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
