Transys
Electronics
L I M I T E D
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
1N4148
DO-35, 500mW
MARKING: Cathode band
+
4148
( no body coat)
General purpose applications. Hermetically sealed glass and the glass passivated chip Provides
excellent stability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified)
DESCRIPTION
SYMBOL
VRRM
Peak Repetitive Reverse Voltage
VR
Reverse Voltage (Continuous)
IF(AV)
Average Forward Current
IF
Forward Current (DC)
IFRM
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current tp=1usec
IFSM
IFSM
tp=1sec
PTA
Power Dissipation
Derating Factor
Tj, Tstg
Operating & Storage Junction Temperature
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Forward Voltage
Reverse Current
Reverse Breakdown Voltage
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
VF
IR
VBR
IF=10mA
VR=20V
VR=75V
IR=100uA
IR=20uA
VR=0V, f=1MHz
IF=50mA, tr=20ns
IF=10mA, to IR=60mA
RL=100ohms
Measured @ IR=1mA
VALUE
80
75
150
200
450
2000
500
500
2.85
-65 to +200
UNIT
V
V
mA
mA
mA
mA
mA
mW
mW/deg C
deg C
MIN
-
-
-
80
75
-
-
-
TYP MAX
-
-
-
-
-
-
-
-
1.0
500
20
-
-
4.0
2.5
4.0
UNIT
V
nA
uA
V
V
pF
V
ns
Cd
Vfr
trr
TRSYS [ TRANSYS Electronics Limited ]
