Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2N5551
FEATURES
Power dissipation
P
CM
: 0.625
W (Tamb=25℃)
1. EMITTER
TRANSISTOR (NPN)
TO-92
Collector current
A
I
CM
: 0.6
Collector-base voltage
V
(BR)CBO
: 180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CEsat
V
BEsat
unless otherwise specified)
Test
conditions
MIN
180
160
6
0.1
0.1
80
80
50
0.5
1
80
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 100
µ
A, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 180 V, I
E
=0
V
EB
= 4 V, I
C
=0
V
CE
= 5 V, I
C
= 1 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V,I
C
= 10 mA,
f =
30MHz
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
µ
A
µ
A
f
T
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-160
B
120-180
C
150-250
TRSYS [ TRANSYS Electronics Limited ]
