Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2N6727
FEATURES
Power dissipation
P
CM
: 1
TRANSISTOR (PNP)
TO-92
1. EMITTER
W(Tamb=25℃)
2. BASE
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
DC current gain
H
FE(2)
H
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(on)
unless otherwise specified)
Test
conditions
MIN
-50
-40
-5
-0.1
-1
-0.1
50
55
60
-0.5
-1.2
50
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
µA
µA
µA
Ic= -1 mA, I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -1 mA, I
C
=0
V
CB
= -50 V, I
E
=0
V
CB
= -40 V, I
B
=0
V
EB
= -5 V, I
C
=0
V
CE
=-1 V, I
C
= -1 A
V
CE
=-1 V, I
C
= -10 mA
V
CE
=-1 V, I
C
= -100 mA
I
C
= -1 A, I
B
= -100 mA
V
CE
= -1 V, I
C
= -1 A
V
CE
=-10 V , I
C
= -50 mA
Transition frequency
f
T
TRSYS [ TRANSYS Electronics Limited ]
