Transys
Electronics
L I M I T E D
SOT-523 Plastic-Encapsulated Transistors
SOT-523
2SA1774
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
: 0.15
W (Tamb=25℃)
Collector current
: -0.15
A
I
CM
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=-
50
µA,
I
E
=0
Ic=-
1
mA, I
B
=0
I
E
=-
50
µA,
I
C
=0
V
CB
=-
60
V, I
E
=0
V
EB
=-
6
V, I
C
=0
V
CE
=-
6
V, I
C
=-
1
mA
I
C
=-
50
mA, I
B
=-
5
mA
V
CE
=-
12
V, I
C
=-
2
mA, f=30MHz
V
CB
=-
12
V, I
E
=0, f=
1
MHz
-60
-50
-7
-0.1
-0.1
120
560
-0.5
140
5
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
120-270
FQ
R
180-390
FR
S
270-560
FS
TRSYS [ TRANSYS Electronics Limited ]
