UTC 2SB647
SILICON PNP EPITAXIAL
APPLICATION
* Low frequency power amplifier
PNP EPITAXIAL SILICON TRANSISTOR
1
TO-92NL
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Ic(peak)
Pc
T
j
T
stg
VALUE
-120
-80
-5
-1
-2
0.9
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Note: Pulse test
SYMBOL
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
I
CBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic= -10µA,I
E
=0
Ic= -1mA,R
BE
=∞
I
E
= -10µA,I
C
=0
V
CB
= -100V,I
E
=0
V
CE
= -5V, Ic= -150mA(note)
V
CE
= -5V, Ic= -500mA(note)
Ic= -500mA,I
B
= -50 mA(note)
V
CE
= -5V,Ic= -150mA(note)
V
CE
= -5V,Ic= -150mA
V
CB
= -10V,I
E
=0,f=1MHz
MIN
-120
-80
-5
60
30
TYP
MAX UNIT
V
V
V
-10
320
-1
-1.5
µA
140
20
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-010,A
TRSYS [ TRANSYS Electronics Limited ]
