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2SB649A 参数 Datasheet PDF下载

2SB649A图片预览
型号: 2SB649A
PDF下载: 下载PDF文件 查看货源
内容描述: TO- 126C塑料封装晶体管 [TO-126C Plastic-Encapsulated Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 64 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
   
Transys
Electronics
L I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A
FEATURES
Power dissipation
P
CM
:
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
TRANSISTOR (PNP)
TO-126C
Collector current
-1.5
A
I
CM
:
Collector-base voltage
V
V
(BR)CBO
: -180
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-1
mA, I
E
=0
Ic=
-10
mA, I
B
=0
2SB649
2SB649A
I
E
=
-1m
A, I
C
=0
V
CB
=
-160
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=-5V, I
C
=
-150
mA
2SB649
2SB649A
V
CE
=
-5
V, I
C
=
-500
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-5
V, I
C
=
-150
mA
V
CE
=
-5
V, I
C
=
-150
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-180
-120
-160
-5
-10
-10
60
60
30
-1
-1.5
140
27
320
200
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
B
60-120
C
100-200
D
160-320