Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB766
FEATURES
Power dissipation
2.
COLLECTOR
P
CM
:
500
mW (Tamb=25℃)
3.
EMITTER
1
2
3
TRANSISTOR (PNP)
SOT-89
1.
BASE
Collector current
-1
A
I
CM
:
Collector-base voltage
-30
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
V
CE
=
-5
V, I
C
=
-1
A
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-10
µA,
I
E
=0
Ic=
-2
mA, I
B
=0
I
E
=
-10
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-10
V, I
C
=
-500
mA
-30
-25
-5
-0.1
-0.1
85
50
-0.2
-0.85
µA
µA
340
I
C
=
-500
mA, I
B
=
-50
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-10
V, I
C
=
-50
mA, f=200MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-0.4
-1.2
V
V
MHz
f
T
C
ob
200
20
30
pF
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
TRSYS [ TRANSYS Electronics Limited ]
