Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SC1674
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
0. 25 W (Tamb=25℃)
2. COLLECTOR
Collector current
I
CM
:
0.02
A
Collector-base voltage
30
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Power gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
(ON)
3. BASE
.
1 2 3
unless otherwise specified)
Test
conditions
MIN
30
20
4
0.1
0.1
40
180
0.3
0.72
400
1.5
5
18
V
V
MHz
MAX
UNIT
V
V
V
µA
µA
Ic= 100µA , I
E
=0
I
C
= 1 mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 30V, I
E
=0
V
EB
=3V ,
I
C
=0
V
CE
=6 V, I
C
= 1mA
I
C
=10 mA, I
B
= 1 mA
V
CE
=6 V, I
C
= 1mA
V
CE
=6 V, I
C
= 1mA
V
CE
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=1mA, f=100MHz,
R
S
=50Ω
V
CE
=6V,I
C
=1mA,f=100MHz
f
T
C
ob
NF
G
P
pF
dB
dB
CLASSIFICATION OF h
FE(1)
Rank
Range
Y
40-80
GR
60-120
BL
90-180
TRSYS [ TRANSYS Electronics Limited ]
