Transys
Electronics
L I M I T E D
TO-252-2 Plastic-Encapsulated Transistors
2SD1758
TO-252-2
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
:
2
W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current
2
A
I
CM
:
Collector-base voltage
40
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
1
2 3
unless otherwise specified)
Test
conditions
MIN
40
32
5
1
1
82
390
0.8
80
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=50µA , I
E
=0
I
C
=1mA,
I
B
=0
I
E
=50µA, I
C
=0
V
CB
=-20V , I
E
=0
V
EB
=4V ,
I
C
=0
V
CE
= 3V , I
C
=500mA
I
C
=2A, I
B
=0.2A
V
CE
= 5V, I
E
= 50mA,f=100MHz
f
T
TRSYS [ TRANSYS Electronics Limited ]
