Transys
Electronics
L I M I T E D
TO-251/TO-252-2Plastic-Encapsulated Transistors
6. 5 0¡ À. 10
0
2 . 30¡ À. 05
0
0. 5 1¡ À. 03
0
14. 70
5¡ ã
5¡ ã
FEATURES
Power dissipation
P
CM
:
1
W (Tamb=25℃)
0. 80¡ À. 0 5
0
0. 6 0¡ À. 0 5
0
1. BASE
2. COLLECTOR
3. EMITTER
2. 3 0¡ À. 05
0
2. 3 0¡ À. 0 5
0
1 . 20
0. 51 ¡ À. 03
0
123
6. 50¡ À. 15
0
5. 30¡ À. 10
0
2. 30¡ À. 10
0
0. 51¡ À. 05
0
Collector current
3
A
I
CM
:
Collector-base voltage
60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-off time
Fall time
Storage time
V
CE(sat)
V
BE(sat)
7. 70
0
5. 50¡ À. 10
2SD1802
TRANSISTOR (NPN)
TO-251
TO-252-2
5. 3 0¡ À. 05
0
5¡ ã
5¡ ã
1. 20
0
9. 70¡ À. 20
0
0. 75¡ À. 10
0. 51¡ À. 10
0
0¡ 0 . 10
«
5¡ ã
5¡ ã
0
1. 60¡ À. 15
2. 30¡ À. 10
0
0. 60¡ À. 10
0
2. 30¡ À. 10
0
0. 51
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
10
µAµ, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
10
µA, I
C
=0
V
CB
=
40
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
2
V, I
C
=
100
mA
V
CE
=
2
V, I
C
=
3
A
I
C
=
2
A, I
B
=
100
mA
I
C
=
2
A, I
B
=
100
mA
V
CE
=
10
V, I
C
=
50
mA
V
CB
=
10
V, I
E
=0,f=
1
MHz
60
50
6
1
1
100
35
0.5
1.2
150
25
70
0
2. 70¡ À. 20
0¡ ¡ ã« ¡ ã
9
0. 6
0. 80¡ À. 10
0
0
5. 50¡ À. 10
µA
µA
560
V
V
MHz
pF
f
T
C
ob
t
on
t
f
t
s
Vcc=25V, Ic=1A
I
B1
=-I
B2
=0.1A
650
35
nS
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
R
100-200
S
140-280
T
200-400
U
280-560
TRSYS [ TRANSYS Electronics Limited ]
