Transys
Electronics
L I M I T E D
TO-252-2Plastic-Encapsulated Transistors
2SD2118
FEATURES
Power dissipation
P
CM
:
1
W (Tamb=25℃)
3. EMITTER
TO-252-2
TRANSISTOR (NPN)
0
9. 70¡ À. 20
0
0. 75¡ À. 10
6. 50¡ À. 15
0
5. 30¡ À. 10
0
0. 51¡ À. 05
0
2. 30¡ À. 10
0
5¡ ã
1. 20
0. 51¡ À. 10
0
0¡ 0 . 10
«
5¡ ã
5¡ ã
1. BASE
2. 30¡ À. 10
0
0. 60¡ À. 10
0
0
1. 60¡ À. 15
2. 30¡ À. 10
0
0. 51
2. COLLECTOR
123
Collector current
5
A
I
CM:
Collector-base voltage
50
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
50
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
50
µA, I
C
=0
V
CB
=
40
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
2
V, I
C
=
500
mA
I
C
=
4
A, I
B
=
100
mA
V
CE
=
6
V, I
C
=
50
mA, f=
100
MHz
V
CB
=
20
V, I
E
=0, f=
1
MHz
50
20
6
0.5
0.5
120
390
1
150
30
0
2. 70¡ À. 20
0¡ ¡ ã« ¡ ã
9
0. 6
0. 80¡ À. 10
0
0
5. 50¡ À. 10
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
120-270
R
180-390
TRSYS [ TRANSYS Electronics Limited ]
