Transys
Electronics
L I M I T E D
SOT-23 BAS29, BAS31, BAS35
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE
BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.
Marking
BAS29– L20
BAS31 – L21
BAS35 – L22
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
2
1
BAS29
3
2
1
BAS31
3
2
1
BAS35
3
ABSOLUTE MAXIMUM RATINGS
(per diode)
Continuous reverse voltage
Repetitive peak forward current
Forward current
Junction temperature
Forward voltage at I
F
= 50 mA
Reverse recovery time when switched from
I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω
;
measured at I
R
= 3 mA
V
R
I
FRM
I
F
T
j
V
F
max.
max.
max.
max.
<
90
600
250
150
0.84
V
mA
mA
°C
V
t
rr
<
75 ns
RATINGS
(per diode) (at T
A
= 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage
V
R
Repetitive peak forward current
I
FRM
Repetitive peak reverse current
I
RRM
max.
max.
max.
90 V
600 mA
600 mA
TRSYS [ TRANSYS Electronics Limited ]
