Transys
Electronics
L I M I T E D
EPITAXIAL SILICON POWER TRANSISTORS
BD175
BD177
BD179
NPN
BD176
BD178
BD180
PNP
EC
TO126
Plastic Package
B
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation @ T
a
=25ºC
Derate above 25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
BD175
BD176
45
45
BD177
BD178
60
60
5.0
3.0
7.0
1.25
10
30
- 65 to +150
BD179
BD180
80
80
UNIT
V
V
V
A
A
W
mW/ºC
W
ºC
R
th (j-a)
R
th (j-c)
100
4.16
MIN
BD175/76
BD177/78
BD179/80
BD175/76
BD177/78
BD179/80
45
60
80
0.8
1.3
40
15
-6
- 10
- 16
40
63
100
3.0
100
160
250
MAX
100
100
100
1.0
ºC/W
ºC/W
UNIT
µA
µA
µA
mA
V
V
V
V
V
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=45V
,
I
E
=0
Collector Cut off Current
V
CB
=60V
,
I
E
=0
V
CB
=80V
,
I
E
=0
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut off Current
*V
CEO (sus)
I
C
=100mA, I
B
=0
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
*V
CE (sat)
*V
BE (on)
*h
FE
*h
FE
Group
I
C
=1A, I
B
=0.1A
I
C
=1A, V
CE
=2V
I
C
=150mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=150mA, V
CE
=2V
Only BD175/76/79
Transition Frequency
f
T
I
C
=250mA, V
CE
=10V
ΜΗz
*Pulse test:- Pulse width=300µs, Duty cycle=1.5%
µ
TRSYS [ TRANSYS Electronics Limited ]
