EPITAXIAL SILICON POWER TRANSISTORS
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
EC
B
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
I
C
=10mA, V
CE
=5V
*h
FE
>40
>40
>30
>20
>15
DC Current Gain
I
C
=500mA, V
CE
=1V
>85
>85
>85
>40
>40
I
C
=2.0A, V
CE
=1V
>50
>50
>40
>25
>15
*h
FE1
/ h
FE2
Current Gain Bandwidth
Product
Matched I =500mA, V =1V
ALL
C
CE
Pairs
I
C
=250mA, V
CE
=1V
ALL
f
T
<1.4
>3.0
UNIT
MHz
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
µ