Transys
Electronics
L I M I T E D
NPN SILICON PLANAR POWER TRANSISTOR
BD707
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ T
c
<25 ºC
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
R
th (j-c)
R
th (j-a)
1.67
70
ºC/W
ºC/W
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
VALUE
60
60
60
5
12
18
5
75
- 65 to +150
UNIT
V
V
V
V
A
A
W
ºC
ELECTRICAL CHARACTERISTICS (T
c
=25ºC Unless Specified Otherwise)
DESCRIPTION
Collector Cut off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=60V, I
E
=O
T
c
=150 ºC
V
CB
=60V, I
E
=O
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=0
I
C
=4A, I
B
=0.4A
I
C
=3A, I
B
= **
I
C
=4A, V
CE
=4V
I
C
=0.5A, V
CE
=2V
I
C
=2A, V
CE
=2V
I
C
=4A, V
CE
=4V
I
C
=10A, V
CE
=4V
I
C
=300mA, V
CE
=3V
40
30
15
5
3
MIN
TYP
MAX
100
UNIT
µA
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Knee Voltage
Base Emitter on Voltage
DC Current Gain
I
CEO
I
EBO
V
CEO(sus)
*
V
CE(sat)
*
V
CEK
*
V
BE(on) *
h
FE
*
1.0
100
1.0
60
1.0
0.4
1.5
400
150
mA
mA
mA
V
V
V
V
Transition frequency
f
T
MHz
*Pulsed : Pulse duration =300µs, duty cycle1.5%
**Value for which I
C
=3.3A @ V
CE
=2V
TRSYS [ TRANSYS Electronics Limited ]
