Transys
Electronics
L I M I T E D
NPN SILICON PLANAR TRANSISTOR
BF370R
TO-92
BEC
Low Level Amplifier Transistor.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
VALUE
VCBO
40
Collector -Base Voltage
VCEO
15
Collector -Emitter Voltage
VEBO
4.5
Emitter Base Voltage
IC
100
Collector Current (Continuous)
PD
500
Power Dissipation @ Ta=25 deg C
4.0
Derate Above 25 deg C
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
260
Lead Temperature for Soldering 1/16"
TL
from Body for 10 Seconds.
Thermal Resistance
Rth (j-c)
83.3
Junction to Case
Rth (j-a)
200
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VCBO
IC=100uA, IE=0
Collector -Base Voltage
VCEO
IC=100uA, IB=0
Collector -Emitter Voltage
VEBO
IE=100uA, IC=0
Emitter Base Voltage
ICBO
VCB=20V, IE=0
Collector Cut off Current
Ta=125 deg C
VCB=15V, IE=0
IEBO
VEB=2V, IC=0
Emitter Cut off Current
hFE
IC=10mA,VCE=1V
DC Current Gain
DYNAMIC CHARACTERISTICS
ft
IC=10mA,VCE=10V
Transistors frequency
IC=40mA,VCE=10V
Cc
VCB=10V, IE=0, f=1MHz
Collector Capacitance
Ce
VEB=1V, IC= Ic=0, f=1MHz
Emitter Capacitance
Cre
IC=0, VCE=10V, f=1MHz
Feedback Capacitance
GV
V(int) RMS
Interference Voltage for K=1%
UNIT
V
V
V
mA
mW
mW/deg C
deg C
deg C
deg C/W
deg C/W
MIN
40
15
4.5
-
-
-
40
TYP
-
-
-
-
-
-
-
MAX
-
-
-
400
30
100
-
-
-
4.5
UNIT
V
V
V
nA
uA
nA
500
-
490
Typ 2.2
-
-
Typ 1.6
Typ 120
MHz
MHz
pF
pF
pF
mV
TRSYS [ TRANSYS Electronics Limited ]
