Transys
Electronics
L I M I T E D
SOT-23 Formed SMD Package
BF820
BF822
SILICON EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
BF820 = 1V
BF822 = 1X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (R
BE
= 2,7 kW )
Collector current (peak value)
Total power dissipation up to T
amb
= 25 °C
Junction temperature
D.C. current gain
I
C
= 25 mA; V
CE
= 20 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 30 V
Transition frequency at f = 35 MHz
I
C
= 10mA; V
CE
= 10 V
V
CB0
V
CE0
V
CER
I
CM
P
tot
T
j
h
FE
C
re
f
T
BF820
max. 300
max. –
max. 300
max.
max.
max.
>
<
>
BF822
250 V
250 V
— V
mA
mW
°C
100
250
150
50
1,6
60
pF
MHz
TRSYS [ TRANSYS Electronics Limited ]
