IRF630N/NS/NL
Power MOSFET
V
DSS =
200V, R
DS(on)
= 0.30 ohm, I
D
= 9.3 A
D
G
S
IRF620N
IRF630NS
IRF630NL
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise
Symbol
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
DS
= 200V
DC
, V
GS
= 0V
DC
V
DS
= 160V
DC
, V
GS
= 0V
DC
Tj=150 C
V
GS
= +20V
DC
V
GS
= -20V
DC
V
DS
= V
GS
, I
D
= 250µA
Value
Min
200
Typ
Max
Unit
Volt
µA
nA
nA
Volt
V
(BR)DSS
V
GS
= 0 V
DC,
I
D
= 250µA
I
DSS
I
GSS
V
GS(th)
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
575
89
25
7.9
27
14
15
-
25
250
100
-100
4.0
0.30
35
6.5
17
Static Drain to Source On - Resistance R
DS(on)
V
GS
= 10V
DC
, I
D
= 5.4A
Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
Continuous Source Current
Pulsed Source Current
Forward Voltage (Diode)
Q
G
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
td
(on)
td
(off)
tr
tf
I
S
I
SM
V
SD
V
GS
= 0V
DC
, I
S
=5.4A, Tp = 300µS
V
DD
= 100V
DC
, I
D
= 4.8A, R
G
=18
R
D
= 20
V
DS
= 25V
DC
, V
GS
= 0V
DC
, f = 1.0MHZ
I
D
= 5.4A
V
DS
= 160V
DC
,
V
GS
= 10V
DC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
A
A
V
-
-
-
-
-
-
-
9.3
37
1.3
-
-
-
MAXIMUM RATINGS
Parameter
Gate to Source Voltage
Drain to Source
Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissapation
Thermal Resistance
(Junction to Ambient)
(Tj = 25 C unless stated otherwise)
Symbol Condition
V
GS
V
DSS
I
D
I
DM
P
D
R
TH (J-A)
(T
A
= 25 C)
Value
+/- 20V
200
9.3
37
82
62
-55 to +175 C
Unit
Volt
Volt
Amp
Amp
W
C/W
Maximum Operating Temperature Range (Tj)
Page 1 of 2
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